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Changes in the Raman intensity can be expressed by the same equation used for the luminescence efficiency improvement. Kuboki, Y. In addition to the nitrogen pair-related lines, some other emission lines have been also observed. The interface state density for wet oxidation is much smaller than that for dry oxidation at any energy level. This suggests that the nonradiative recombination centers eliminated by photoexcitation are not defects formed by a single nitrogen atom but complexes formed by gathering of several nitrogen atoms. Strong PL was observed between 0. XRD satellite peaks due to the periodic structure were clearly observed in the MQW structures grown at temperatures lower than C. Yoshida a-plane InN films were grown on r-plane sapphire substrates with GaN underlayers by RF-N2 plasma molecular beam epitaxy MBE. Hijikata, S. We have found that the oxidation rates at the oxidation thickness of approximately less than around 20 nm are much larger than those given using the Deal-Grove D-G model, suggesting that the oxidation time dependence of the oxide thickness cannot be explained using the D-G model, i. Micro Raman study revealed that the GaAs-like LO mode phonon peak intensity increased with photoexcitation time in a similar way to the increase in the radiative efficiency. Inoue, M. With increasing laser power density, the Raman intensity of GaAs-like LO mode phonon was found to increase more rapidly and to be saturated in a shorter time. Yoshida, M. Ono, F. Kobayahi, H. Yoshida, Y. Akiyama, W. Hirano, T. This difference is distinguishable in terms of the spectral-phase flip, utilizing photoreflectance, and electroreflectance. Raman peaks were observed at , and cm-1, which can be identified as the A1 transversal optical TO , E2 high and E1 longitudinal optical LO mode phonon, respectively. Akiyama, N. By using the empirical relation, which has been proposed for Si oxidation, i. Doping optical microscopy,. Yaguchi, T. Off-Angle Dependence of Characteristics of 4H-SiC-Oxide Interfaces ,Materials Science Forum, Y. Hijikata, H. Orihara, Y. Hattori Wet and dry oxide films-4H-SiC epitaxial C-face interfaces have been characterized by capacitance-voltage C-V measurements and soft x-ray excited photoemission spectroscopy SX-PES and hard x-ray excited photoemission spectroscopy HX-PES using synchrotron radiation. Shikata, M. Tanioka, Y. Considering that this phenomenon is in a time scale of several seconds, the photo-induced structural changes correspond not to long range inter-diffusion but to local changes in atomic configuration which lead to the decrease in the density of nonradiative recombination centers. Nakajima, R. X-ray diffraction, Molecular beam epitaxy, Quantum wells, Nitrides, Semiconducting III—V materials Characterization of Oxide Films on 4H-SiC Epitaxial Faces by High-Energy-Resolution Photoemission Spectroscopy: Comparison between Wet and Dry Oxidation ,Journal of Applied Physics, Y. Onabe We have used in situ micro-Raman spectroscopy to clarify the mechanism of the luminescence efficiency improvement of GaAsN alloys by laser irradiation. Akiyama, D. Yoshida, N. Onabe We have measured micro-photoluminescence PL spectra of nitrogen delta-doped GaAs with various concentrations. We have carried out micro-Raman scattering measurements for a-plane InN film. Aoki, H. It is suggested from the excitation intensity and temperature dependence of the PL spectra that the red shift of the PL peak is due to the Franz-Keldysh effect. Nohira and T. Kakubari, R. Onabe We have studied photoluminescence spectra in detail to clarify the character of the isoelectronic traps in dilute GaAsN alloys. In nitrogen delta-doped GaAs with low concentrations, the micro-PL spectra measured at different positions were individually different. Aoki, T. By analyzing the reflectance spectra of cubic InN films, we could derive the refractive index and extinction coefficient, and found the band gap energy of cubic InN is 0. Inoue, G. Raman peak intensity of GaAs-like longitudinal optical LO mode phonon was observed to increase with the laser irradiation time. This indicates that the increase in Raman intensity of GaAs-like LO phonon is closely related to the luminescence efficiency improvement. Endo, K. With increasing excitation power density, the radiative efficiency increased more rapidly. Photoluminescence study of isoelectronic traps in dilute GaAsN alloys Wiley,Physica Status Solidi c ,4 7 H. X-ray diffraction XRD measurements and reflection high-energy electron diffraction RHEED observation revealed that the InN films were grown with InN 1 1 -2 0 GaN 1 1 -2 0 sapphire 2 -2 0 4. Yoshita, H. The surface morphology, structural properties, and optical properties of the samples were investigated by scanning electron microscopy SEM , X-ray diffraction XRD and photoluminescence PL , respectively. In addition, the areal densities of these states were found to be in a good correspondence with those of the interface states. Real Time Observation of SiC Oxidation using In-Situ Ellipsometer ,Materials Science Forum, K. Kobayashi, H. Akiyama and K. Step-terrace structures were clearly observed in the surface morphology after the removal of oxide layers for small off-angle substrates, which shows that the interfaces were atomically smooth. Yaguchi and S. Katayama and K. Shikata, S. Usami, D. Metalorganic vapor phase epitaxy, Semiconducting III—V materials Micro-Raman study on the improvement of luminescence efficiency of GaAsN alloys Elsevier,Journal of Crystal Growth, K. The reasons for the good electrical characteristics of metal-oxide-semiconductor devices fabricated by wet oxidation are discussed in terms of the depth profiles of oxide films derived from the SX-PES and HX-PES results. The difference in the PL peak energy between hexagonal and cubic InN is in good agreement with that predicted by ab-initio calculations. Growth Rate Enhancement of -Face Silicon-Carbide Oxidation in Thin Oxide Regime ,Japanese Journal of Applied Physics,46 32 :LL T. For a dilute GaAsN alloy with lower nitrogen concentration, we have observed that the intensity of an emission line increased superlinearly with excitation power. Morioke, Y. In contrast, almost the same spectra were obtained for nitrogen d-doped GaAs with higher concentrations and uniformly nitrogen-doped GaAs. These results suggest that the small Nit and Si values for small off-angle substrates relate to the smoothness of the interface and that high performance SiC MOS devices are expected by using small off-angle substrates. The relations between oxide thickness and oxidation time were obtained precisely by virtue of the real time measurements.{/INSERTKEYS}{/PARAGRAPH} PL emissions from the MQW were observed around 0. Kondo A lattice polarity determination method for GaN is demonstrated, which is based on a capability of modulation spectroscopy for the assignment of electric-field directions performed nondestructively using simple optical setups. Yoshida The thermal oxidation of silicon carbide SiC has been studied by performing in-situ ellipsometry. Morioke, T. Several sharp lines have been observed at the lower energy side of the GaAs bandgap and are in good agreement with the nitrogen pair-related emission lines previously reported. Endo, Y. We found that the interface state density Nit and the amount of sub-oxides Si for small off-angle substrates were smaller than those for large off-angle ones. Onabe We have investigated the excitation power density and nitrogen concentration dependence of the changes in the radiative efficiency of GaAsN alloys to examine the mechanism of the photo-induced improvement of radiative efficiency. Yamamoto, Y. Matsushita and T. Aoki and K. silicon carbide SiC , C-face, oxidation, in-situ ellipsometry, Deal—Grove model, Massoud empirical equation Micro-photoluminescence study of nitrogen delta-doped GaAs grown by metalorganic vapor phase epitaxy Elsevier,Journal of Crystal Growth, Y. Katayama, K. We also carried out photoluminescence PL measurements for a-plane InN film. Yaguchi, S. Hattori SiC-Oxide interfaces on 4H-SiC epitaxial substrates of various off-angles have been characterized by C-V measurements, synchrotron radiation excited photoemission spectroscopy and atomic force microscopy. Takata, K. Defects, Optical microscopy, Metalorganic vapor phase epitaxy, Alloys, Semiconducting III—V materials Modulation spectroscopic investigation on lattice polarity of gallium nitride American Institute of Physics,Applied Physics Letters,91 6 R. Nohira, and T. This indicates a good prospect for applications of isoelectronic traps to single photon emitting devices. {PARAGRAPH}{INSERTKEYS}A single PL peak was observed at 0. Onabe, H. Time constants of changes in the Raman intensity were almost in agreement with those of the luminescence efficiency improvement. Shimizu, Y. It was also found that there is a good correlation between the amount of the interface states and that of sub-oxides.